Simulation Standard

How to obtain a stable grid and smooth doping profile in non-planar a-Si TFT using Athena/Elite?

Abstract Improvement in temperature characteristics of GaN LEDs is important for realizing reliable devices operating at high temperatures. In this article, the thermal characteristics of GaN LEDs have been analyzed

Introduction By default STELLAR calculates the capacitances between interconnect lines and the whole substrate. In certain conditions it may lead to some inaccuracies. For example STELLAR may calculate the capacitance

1. Introduction Amorphous oxide semiconductor materials have attracted much attention as key components of TFTs for flexible electronics [1]. The advantages of such materials include flexibility and transparency which are

Polarization-induced charges at the AlGaN/GaN interface of heterojunction field-effect transistors (HFETs) create a high density, two-dimensional electron gas (2DEG) in the channel. One approach to simulating the 2DEG is to

Interconnect parasitic effects play a very important role in modern integrated circuit design, especially for digital circuit. This article presents how a cell level BiCMOS nand gate is extracted with

Introduction Power MOSFETs are widely used with an inductive load for S/W power supplies, DC-DC converters, and so on. But due to high frequency operation, the surge voltage applied to

Introduction With the MOSFET gate lengths scaling down to sub-20nms many kinds of devices have been proposed and researched such as double-gate, tri-gate, four-gate and gate-all-around (wire) MOSFETs.

Abstract The measured I-V curve from a ten period Si/SiGe MQW pin LED fabricated using a UHVCVD system is compared with ATLAS simulation results. A sizable silicon emission peak is

A conventional 2 layer organic light emitting diode consists of a Hole Ttransport Layer (HTL) and an electron transport layer (ETL). A good OLED structure requires sufficient carrier injection so