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Simulation Standard
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
18 years ago
Hints, Tips and Solutions – Determining the CV Curve and Terminal Currents of a MOSFET
Q: How can I get a CV curve of a MOSFET? And how can I get the current on all terminals? A: There are two methods to get the CV
18 years ago
Minimization of Well-Proximity Effect by Means of 2D and 3D Monte Carlo Simulation of Retrograde Well Implantation
The formation of deep p- and n- wells using high-energy implantation has become an integral part of CMOS technology process flow. The high energy and high dose implantation into the
18 years ago
3D Simulation of Oxidation Induced Stress Using Cartesian Meshes with Adaptive Refinement
The formation of isolation trenches is one of the key process steps used in power device fabrication. Also the intensive scaling of modern semiconductor devices requires significant stress engineering to
18 years ago
3D Simulation of Ion Milling for Mass Storage Applications
The ion milling process is used extensively in the Hard Disc Drive industry, particularly in the manufacture of thin film magnetic heads. Ion milling is used to pattern many metal
18 years ago
Self-Heating effect Simulation of GaN HFET Devices – 4H-SiC and Sapphire Substrate Comparison
GaN-based Hetero-Field Effect Transistors have been investigated in high power and high frequency electronics devices. However, such improved performance is still subject to influence of surface and buffer traps. The
18 years ago
Modeling of GaInP/GaAs DualJunction Solar Cells Including Tunnel Junction
This paper presents research efforts conducted at the IESUPM in the development of an accurate, physically-based solar cell model using the general-purpose ATLAS device simulator by Silvaco. Unlike solar cell
19 years ago
Ballistic Quantum Transport in Nanoscale Transistors: a Non Equilibrium Green’s Function Approach
Introduction As MOS field-effect transistors are scaled down to a nanometer regime, quantum effects in both transverse and transport directions start playing a major role in determining device characteristics. In
19 years ago
A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation
Abstract The paper presents a new approach to three-dimensional semiconductor process simulation that overcomes the problem of moving boundaries and mesh generation. Contrary to using unstructured meshes, the approach makes
19 years ago
Simulation of an Organic Photovoltaic Cell (OPC) Using Atlas
Introduction In recent years, the investigation of Organic Light Emitting Diodes (OLEDs) and photovoltaic devices based on small organic molecules and polymers has attracted significant interest due to their potential
19 years ago
Two-Dimensional Atlas Device Simulation of an Organic Light-Emitting Field-Effect Transistor Using a Heterostructure Inside the Transistor Channel
1. Introduction Organic semiconductors have been incorporated in a wide range of devices, including organic thin-film transistors (OTFTs) and circuits, organic solar cells, organic non-volatile memories and organic light-emitting diodes