Simulation Standard

Monte Carlo module of Athena allows accurate simulation of ion implantation in 4H-SiC and 6H-SiC [1]. It is known that channeling effects are very pronounced in SiC since its lattice

We demonstrate the capabilities of SILVACO TCAD tools for the design and simulation of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors. We compute the photoconductive gain spectrum of the device

In this article the various enhancements to the organic device modeling that have been implemented recently in Atlas are presented. Following the description of the carrier statistics and the new

Fabrication of various nano-structures often requires mask controlled or patterned etching of materials. The chemical or wet etch methods cannot be used for nanoscale geometries due to the substantial isotropic

Silicon has long been the semiconductor of choice for high-voltage power electronics applications [1,2]. However, wide-bandgap semiconductors such as SiC have begun to attract attention because they are projected to

In this article we describe a technique to automatically calibrate parameters of an Ion Enhanced Chemical Etching model implemented in the 3D process simulator VICTORY Process to measurements published in

Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2]. During

The three-dimensional process simulator VICTORY Process now includes a semi-empirical model for the simulation of ion milling. During ion milling, the mill (etch) rate depends in a complex way on

VICTORY Process is supplied with a wide range of models and data for an extensive set of materials, so that you can simulate many process steps without the need to

Accurate stress simulation has become a necessary part of performance and reliability analysis of semiconductor devices. In our previous paper [1] we demonstrated that 3D stress simulation of the whole