Simulation Standard

Compared with regular MOSFET devices, the body bias effect in HVMOS is usually more pronounced. In addition to the regular threshold voltage increase with body bias, the LDD region of

3D TFT analysis has been getting lots of attention due to issues caused by 3D effects such as the edge effect on the TFT characteristics. The presence of an enhanced

Dual-Gate Thin Film Transistors (DGTFTs) are often used in pixel driver and peripheral circuits for liquid crystal displays. This is because of the reduction of the gate-off state leakage current

The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE). With 20 nm advanced planar technology, the source and

Semiconductor devices such as bipolar power transistors and solar cells may operate over a range of optical or electrical injection levels. In some cases of high injection, this may result

During the last several years, the enhancement of integrated circuits (ICs) performance and power consumption have contributed to the continual scaling down the size of transistors. However, scaling down semiconductor

Q: How do I extract geometric information, such as material thickness or junction depth, from the current 3D process simulation using Victory Process?

Some electronic devices operate at very low, cryogenic temperatures, sometimes as low as 4 K, which is the temperature of liquid helium. Such devices include infra-red (IR) photodetectors or single-photon

In the AlGaN/GaN HEMT fabrication process, silicon nitride (Si3N4) passivation of the HEMT surface layer, which is typically AlGaN, is commonly used to mitigate defect-related charge traps at the AlGaN

SUPREM-IV – Stanford University PRocEss Modeling Program was first released 30 years ago. Since then its descendants - Athena from Silvaco and TSUPREM-4TM from TMA/Avant/Synopsys - have been 2D process