Casey Molver

In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to as the direction (see Figure 1). With regard to

Interdigitated back contact silicon heterojunction (IBC-SHJ) combines the advantages of interdigitated back contact (IBC) and silicon heterojunction (SHJ) solar cells. Having all the contacts at the back of the cell

Silicon has long been the semiconductor of choice for high-voltage power electronics applications. However, wide-bandgap semiconductors such as SiC and GaN have begun to attract attention because they are projected

Monte Carlo module of Athena allows accurate simulation of ion implantation in 4H-SiC and 6H-SiC [1]. It is known that channeling effects are very pronounced in SiC since its lattice

We demonstrate the capabilities of SILVACO TCAD tools for the design and simulation of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors. We compute the photoconductive gain spectrum of the device

In this article the various enhancements to the organic device modeling that have been implemented recently in Atlas are presented. Following the description of the carrier statistics and the new

Fabrication of various nano-structures often requires mask controlled or patterned etching of materials. The chemical or wet etch methods cannot be used for nanoscale geometries due to the substantial isotropic

Silicon has long been the semiconductor of choice for high-voltage power electronics applications [1,2]. However, wide-bandgap semiconductors such as SiC have begun to attract attention because they are projected to

In this article we describe a technique to automatically calibrate parameters of an Ion Enhanced Chemical Etching model implemented in the 3D process simulator VICTORY Process to measurements published in

Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2]. During

The three-dimensional process simulator VICTORY Process now includes a semi-empirical model for the simulation of ion milling. During ion milling, the mill (etch) rate depends in a complex way on

VICTORY Process is supplied with a wide range of models and data for an extensive set of materials, so that you can simulate many process steps without the need to