13 years ago
The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface. This leads to reduced saturation currents and
13 years ago
This webinar will outline in detail a calibration procedure used for amorphous silicon Thin-Film Transistors (a-Si TFTs) where TCAD simulations are compared to measurements. We will present a TCAD calibration
13 years ago
This webinar will provide a discussion of the methods used to design, simulate and optimize the performance of power devices using TCAD and SPICE simulations. Silicon has long been the
13 years ago
This webinar will provide a discussion of the methods used by radiation effects engineers to model the impact of Single Event Effects (SEE) and some of their effects on devices
13 years ago
A new feature that is introduced in Silvaco’s TCAD applications allows the user to run a parallel simulation on a cluster of computers within a network.
13 years ago
A: The 2 basic commands needed to illuminate a structure in Victory Device are BEAM and SOLVE. A single (or multiple) BEAM statement(s) are specified containing the light source properties.
13 years ago
Wide-bandgap semiconductors such as SiC and GaN have attracted much attention because they are expected to break through the material limits of silicon. In particular, AlGaN/GaN HEMTs are generally promising
13 years ago
We demonstrate the modeling of optical response of exciton-polarons based on the well established Holstein Hamiltonian to model coupled exciton-phonon systems in organic molecular chains. Our approach uses Green’s functions
13 years ago
When a wafer is clamped only at its edges and is heated with an infra-red source in a vacuum, the majority of the heat loss occurs through black body radiation.
13 years ago
Single-crystal gallium oxide (Ga2O3) has attracted increasing attention as a promising material for power device applications. It possesses excellent material properties and has the potential for mass productivity of low-cost
13 years ago
A methodology for simulating an edge emitting laser is demonstrated that incorporates a distributed Bragg Reflector (DBR) as one of the mirrors, with the other being a variable air gap
13 years ago
A new class of high-voltage semiconductor devices, known as a reverse conducting IGBT (RC-IGBT), has emerged in recent years from research efforts to diminish the usage of external anti-parallel free-wheeling