Casey Molver

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster. 

14 years ago

Accurate stress simulation has become a necessary part of performance and reliability analysis of semiconductor devices. In our previous paper [1] we demonstrated that 3D stress simulation of the whole

14 years ago

Following the successful 3D simulation of the process flow of cantilever based MEMS switches using VICTORY Process is presented in August 2005 Simulation Standard article “Process Flow Simulation and Manufacture”,

15 years ago

The Gallium Nitride-based material family has fundamental material properties which make it an attractive candidate for semiconductor device fabrication. These properties include: High saturation velocities and breakdown field strength Direct

15 years ago

This article demonstrates a new feature of TonyPlot3D. This feature enables the automated, syntax driven export of 2D structure slices from 3D structures. Also demonstrated in this article is the

15 years ago

Amorphous silicon Thin-Film Transistors (a-Si TFTs) are widely used as the switching device of liquid crystal display (LCD) technology. For development and analysis of a-Si TFTs, many research groups are

15 years ago

Both flexible and touch panel displays have become popular for portable applications. To meet various functional requirements, system-on-panel (SOP) design has become essential [1] and different layouts as well as

15 years ago

In 1975, screen printing was first applied to solar cells for the formation of the front and rear contacts replacing expensive vacuum metallization [1]. The encapsulate used in a photovoltaic

15 years ago

Single-photon counting detectors are used in a wide range of applications, including astronomy, optical communications, biological sensors, and military uses. Photomultiplier tubes (PMTs) have fulfilled these needs in the past.

15 years ago

In this paper, a two dimensional (2-D) generic model of quantum well light emitting diode (LED) based on ZnO, II-VI compound semiconductors has been reported. The structure has been designed

15 years ago

To break through the material limits of Silicon and to realize the drastic performance improvement needed to meet the severe requirements in the future, wide bandgap semiconductors such as SiC

15 years ago

The analysis and characterization of stress effects have become an integral part of semiconductor technology and device design. In a typical semiconductor process flow the stresses are generated primarily due

15 years ago

OLEDs have been researched for application in display devices due to their considerable advantages. In order to further improve and optimize devices for practical applications, the electrical and optical parts