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April 1, 2018

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

9 years ago

TCAD Simulation of Si and GaAs p-n Junction Devices at Cryogenic Temperatures, Down to 2 K

Cryogenic electronics plays a fundamental role in several applications, such as spacecraft, high-energy physics experiments, metrology, superconductive astronomical detectors and, with the increased interest in quantum computing, the manipulation of

9 years ago

Bi-axial Deformation with Victory Mesh for Flexible Electronic Applications

For high performance large area flexible electronics, amorphous metal oxide semiconductor based thin film transistors offer many advantages. These include high mobility, steep sub-threshold and ultralow leakage current, with low

9 years ago

TCAD-based GaN HEMT Scalable Modeling Flow Using the MVSG Compact Model

Gallium Nitride High Electron Mobility (GaN HEMT) device technology has gained a lot of traction during the last years. These devices have significant advantages compared to Silicon in user applications

9 years ago

Hints, Tips and Solutions – Adding Random Noise to Mask Layout

Geometrical module of Victory Process allows the fast and accurate transfer of mask patterns to the structure. However, sometimes it is necessary to emulate the imperfections of physical processes while