Daily Archives: October 1, 2012
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October 1, 2012
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
14 years ago
Calibration of the Ion Enhanced Chemical Etching Model of VICTORY Process Using Virtual Wafer Fab
In this article we describe a technique to automatically calibrate parameters of an Ion Enhanced Chemical Etching model implemented in the 3D process simulator VICTORY Process to measurements published in
14 years ago
Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics
Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane
14 years ago
A Semi-Empirical Model for the Simulation of Ion Milling in VICTORY Process
The three-dimensional process simulator VICTORY Process now includes a semi-empirical model for the simulation of ion milling. During ion milling, the mill (etch) rate depends in a complex way on
14 years ago
Developing Custom Etching/Deposition Models in VICTORY Process
VICTORY Process is supplied with a wide range of models and data for an extensive set of materials, so that you can simulate many process steps without the need to