October 1, 2012

In this article we describe a technique to automatically calibrate parameters of an Ion Enhanced Chemical Etching model implemented in the 3D process simulator VICTORY Process to measurements published in

Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2]. During

The three-dimensional process simulator VICTORY Process now includes a semi-empirical model for the simulation of ion milling. During ion milling, the mill (etch) rate depends in a complex way on

VICTORY Process is supplied with a wide range of models and data for an extensive set of materials, so that you can simulate many process steps without the need to