In this article we describe a technique to automatically calibrate parameters of an Ion Enhanced Chemical Etching model implemented in the 3D process simulator VICTORY Process to measurements published in

Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane

The three-dimensional process simulator VICTORY Process now includes a semi-empirical model for the simulation of ion milling. During ion milling, the mill (etch) rate depends in a complex way on

VICTORY Process is supplied with a wide range of models and data for an extensive set of materials, so that you can simulate many process steps without the need to

Accurate stress simulation has become a necessary part of performance and reliability analysis of semiconductor devices. In our previous paper [1] we demonstrated that 3D stress simulation of the whole

Following the successful 3D simulation of the process flow of cantilever based MEMS switches using VICTORY Process is presented in August 2005 Simulation Standard article “Process Flow Simulation and Manufacture”,

The Gallium Nitride-based material family has fundamental material properties which make it an attractive candidate for semiconductor device fabrication. These properties include: High saturation velocities and breakdown field strength Direct

This article demonstrates a new feature of TonyPlot3D. This feature enables the automated, syntax driven export of 2D structure slices from 3D structures. Also demonstrated in this article is the

Amorphous silicon Thin-Film Transistors (a-Si TFTs) are widely used as the switching device of liquid crystal display (LCD) technology. For development and analysis of a-Si TFTs, many research groups are

Both flexible and touch panel displays have become popular for portable applications. To meet various functional requirements, system-on-panel (SOP) design has become essential [1] and different layouts as well as