Yearly Archives: 2004
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2004
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
22 years ago
Noise Simulations
If the MOS model file has the parameters: noia, noib, noic, Af, Kf and nlev=0 will SmartSpice ignore the BSIM III noise parameters (noia, noib and noic)
22 years ago
EDIF Conversion Flow on Gateway
EDIF has been a vital part of the Electronic Design Automation (EDA) industry for many years and Gateway allows users to convert edif200 formatted files of other tools vendors into
22 years ago
Hipex-CRC Parasitic RC-Network Reducer
Design of large scale chips requires precise knowledge of interconnect delays. However, detailed analysis of interconnects may quickly become computationally too expensive due to the distributed nature of the networks,
22 years ago
SET Accurate Compact Model for SET-MOSFET Hybrid Circuit Simulation
Single-Electron Transistors (SETs) [1][2] are attractive candidates for post-CMOS VLSI ICs. Accurate models are also required in order to efficiently design SET circuits and hybrid circuits
22 years ago
Generic Devices – The New HIPEX-NET Feature for Extraction of Custom Devices
Hipex-NET is SILVACO’s powerfull hierarchical layout netlist extractor. Built-in extracting rules permit to make fast and accurate parameter extraction for basic set of devices as MOS, BJT, diode, capacitor and
22 years ago
How can I become a more efficient user of Expert?
How can I become a more efficient user of Expert?
22 years ago
Electrostatic Effect of Localized Charge in Dual Bit Memory Cells with DiscreteTraps
In this paper the electrostatic impact of Channel Hot Electron (CHE) injection in discrete-trap memories is quantitatively addressed. The dual bit behavior of the transfer characteristic during forward and reverse
22 years ago
A New Efficient Quantum Method: The Bohm Quantum Potential Model
This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. SILVACO has already included in its device simulator ATLAS, a Schrödinger-Poisson solver and
22 years ago
The subject of how to use the EXTRACT statement in DeckBuild often arises
The subject of how to use the EXTRACT statement in DeckBuild often arises. The EXTRACT statement is a very useful tool for analysing data and can be performed on both
22 years ago
Simulating Selective and Non-Selective Epitaxy over Oxide Isolated Regions Using Athena
In certain cases, most notably in modern bipolar and SiGe HBT structures, epitaxial steps are performed after the oxide isolation structures have been already created. Thus the initial surface prior