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2004

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

22 years ago

Noise Simulations

If the MOS model file has the parameters: noia, noib, noic, Af, Kf and nlev=0 will SmartSpice ignore the BSIM III noise parameters (noia, noib and noic)

22 years ago

EDIF Conversion Flow on Gateway

EDIF has been a vital part of the Electronic Design Automation (EDA) industry for many years and Gateway allows users to convert edif200 formatted files of other tools vendors into

22 years ago

Hipex-CRC Parasitic RC-Network Reducer

Design of large scale chips requires precise knowledge of interconnect delays. However, detailed analysis of interconnects may quickly become computationally too expensive due to the distributed nature of the networks,

22 years ago

SET Accurate Compact Model for SET-MOSFET Hybrid Circuit Simulation

Single-Electron Transistors (SETs) [1][2] are attractive candidates for post-CMOS VLSI ICs. Accurate models are also required in order to efficiently design SET circuits and hybrid circuits

22 years ago

Generic Devices – The New HIPEX-NET Feature for Extraction of Custom Devices

Hipex-NET is SILVACO’s powerfull hierarchical layout netlist extractor. Built-in extracting rules permit to make fast and accurate parameter extraction for basic set of devices as MOS, BJT, diode, capacitor and

22 years ago

How can I become a more efficient user of Expert?

How can I become a more efficient user of Expert?

22 years ago

Electrostatic Effect of Localized Charge in Dual Bit Memory Cells with DiscreteTraps

In this paper the electrostatic impact of Channel Hot Electron (CHE) injection in discrete-trap memories is quantitatively addressed. The dual bit behavior of the transfer characteristic during forward and reverse

22 years ago

A New Efficient Quantum Method: The Bohm Quantum Potential Model

This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. SILVACO has already included in its device simulator ATLAS, a Schrödinger-Poisson solver and

22 years ago

The subject of how to use the EXTRACT statement in DeckBuild often arises

The subject of how to use the EXTRACT statement in DeckBuild often arises. The EXTRACT statement is a very useful tool for analysing data and can be performed on both

22 years ago

Simulating Selective and Non-Selective Epitaxy over Oxide Isolated Regions Using Athena

In certain cases, most notably in modern bipolar and SiGe HBT structures, epitaxial steps are performed after the oxide isolation structures have been already created. Thus the initial surface prior