Event

A new feature that is introduced in Silvaco’s TCAD applications allows the user to run a parallel simulation on a cluster of computers within a network.

A: The 2 basic commands needed to illuminate a structure in Victory Device are BEAM and SOLVE. A single (or multiple) BEAM statement(s) are specified containing the light source properties.

Wide-bandgap semiconductors such as SiC and GaN have attracted much attention because they are expected to break through the material limits of silicon. In particular, AlGaN/GaN HEMTs are generally promising

We demonstrate the modeling of optical response of exciton-polarons based on the well established Holstein Hamiltonian to model coupled exciton-phonon systems in organic molecular chains. Our approach uses Green’s functions

When a wafer is clamped only at its edges and is heated with an infra-red source in a vacuum, the majority of the heat loss occurs through black body radiation.

Single-crystal gallium oxide (Ga2O3) has attracted increasing attention as a promising material for power device applications. It possesses excellent material properties and has the potential for mass productivity of low-cost

A methodology for simulating an edge emitting laser is demonstrated that incorporates a distributed Bragg Reflector (DBR) as one of the mirrors, with the other being a variable air gap

A new class of high-voltage semiconductor devices, known as a reverse conducting IGBT (RC-IGBT), has emerged in recent years from research efforts to diminish the usage of external anti-parallel free-wheeling

In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to as the direction (see Figure 1). With regard to

Interdigitated back contact silicon heterojunction (IBC-SHJ) combines the advantages of interdigitated back contact (IBC) and silicon heterojunction (SHJ) solar cells. Having all the contacts at the back of the cell