10 years ago
The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE). With 20 nm advanced planar technology, the source and
10 years ago
Parasitic extraction is a mandatory step for physical design sign off, and at advanced nodes, parasitics substantially impact the behavior of circuit design. Any analysis must consider the interconnect parasitic
10 years ago
This webinar will provide specific approaches for simulating electronic device behavioral changes, including oxide charging and physical damage, during their exposure to four of the most common radiation environments that
10 years ago
This webinar will introduce Radiant developed as an integrated simulation environment of LED and OLED devices and will focus on an OLED, which is getting much attention in the field
10 years ago
Semiconductor devices such as bipolar power transistors and solar cells may operate over a range of optical or electrical injection levels. In some cases of high injection, this may result
10 years ago
During the last several years, the enhancement of integrated circuits (ICs) performance and power consumption have contributed to the continual scaling down the size of transistors. However, scaling down semiconductor
10 years ago
Q: How do I extract geometric information, such as material thickness or junction depth, from the current 3D process simulation using Victory Process?
10 years ago
Two-dimensional process simulators based on SUPREM-IV from Stanford University have been used in semiconductor research and industry for almost 30 years. Tremendous progress in the semiconductor technology requires transition to
10 years ago
The impact of variation on analog design has become critical with the advanced nodes technology. The regular Monte Carlo approach for statistical analysis has reached its limit and can no
10 years ago
Some electronic devices operate at very low, cryogenic temperatures, sometimes as low as 4 K, which is the temperature of liquid helium. Such devices include infra-red (IR) photodetectors or single-photon
10 years ago
In the AlGaN/GaN HEMT fabrication process, silicon nitride (Si3N4) passivation of the HEMT surface layer, which is typically AlGaN, is commonly used to mitigate defect-related charge traps at the AlGaN
10 years ago
SUPREM-IV – Stanford University PRocEss Modeling Program was first released 30 years ago. Since then its descendants - Athena from Silvaco and TSUPREM-4TM from TMA/Avant/Synopsys - have been 2D process