2 years ago

It is often the case that a design of experiments (DOE) is required to optimize the performance of a particular device. Sometimes this simply means tweaking the implant dose for

2 years ago

Recently a new diffusion model was introduced to Victory Process: the CMOS model. This model aims at taking on the challenges brought by the specificities of CMOS device processing such

3 years ago

Properly setting the wafer orientation in Victory Process (VP) is critical for various processes such as ion implantation, etching, and deposition. For ion implantation in particular, the determination of the

3 years ago

Photonic integrated circuits (PICs) are a key enabling technology for a broad range of current and next-generation products. Combining semiconductor materials and manufacturing processes common to microelectronics with the encoding,

3 years ago

2024年3月28日 在打开和关闭SiC器件时,器件容易出现异常过载,因此在一些应用中对器件“鲁棒性”有要求,例如需进行短路测试和UIS测试。在本次研讨会中,来自意法半导体的研发人员将为大家介绍如何使用Silvaco TCAD软件对SiC器件短路现象进行研究。

3 years ago

This paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the

3 years ago

2024年2月29号 我们将举例说明Silvaco仿真工具如何帮助研究人员设计、预测和分析垂直和横向GaN功率器件的电特性。

2024年2月8号 我们将为您介绍不同制造工艺的功率器件,包括Si、GaN和SiC器件,分析它们的特点和优势,并分享其SPICE建模的各种方法和挑战。