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面向动态导通电阻、漏电、击穿及机器学习辅助设计探索的常关型p-GaN HEMT预测性TCAD建模

本文介绍了一套用于常关型p-GaN高电子迁移率晶体管（HEMT）预测性仿真的实用TCAD工作流程，重点涵盖器件物理校准、泄漏建模、动态导通电阻、击穿特性以及机器学习辅助的设计空间探索。