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2020

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

7 years ago

TCAD Simulations of RF-SOI Switches with Trap-Rich Substrate

The market for cellular components has been shifting rapidly from GaAs pHEMT or silicon-on-sapphire (SOS) to silicon-based technology. CMOS (silicon-on-insulator) SOI antenna switches which are compatible with multimode GSM/EDGE, TD/WCDMA,

7 years ago

Hints and Tips: Specify Units in the Victory Process Material Statement

It is crucial for any kind of calculations that units are consistent between equations and modeling modules. Often different units are used in various experimental and theoretical fields. Therefore, we

7 years ago

Utmost IV Quick-Start Model Optimization Templates

March 12th 2020 | 10:00 am - 11:00 am (PDT) This webinar will present a new capability available in UTMOST IV: the Quick-Start Optimization Templates. This is a feature that

7 years ago

Hints and Tips: How do I Load, Remesh, and Refine an Existing Device Structure in Victory Mesh?

Victory Mesh initially supported loading and remeshing of the saved status from Victory Process. Victory Mesh 1.5.0 onwards is now able to load and remesh individual structure files (.str files),

Nanoscale Devices

Nanoscale Devices The full text for most of these papers may be found at the IEEE website at www.ieee.org. P. Blaise,1,2 “Ab Initio Simulation of Advanced Materials and Devices: Current

Solar Cells

Solar Cells The full text for most of these papers may be found at the IEEE website at www.ieee.org. Samy Almosni,[a,b] Ludmila Cojocaru,[a] Debin Li,[c] Satoshi Uchida,* [d] Takaya Kubo,[a]

MEMS

MEMS The full text for most of these papers may be found at the IEEE website at www.ieee.org. Yonghyun Shim, Member, IEEE, Jean-Pierre Raskin, Member, IEEE, César Roda Neve, Member,

Memory Devices

Memory Devices The full text for most of these papers may be found at the IEEE website at www.ieee.org. Daewoong Kang, Hyungcheol Shin, “Improving the cell characteristics using arch-active profile

Optoelectronics

Optoelectronics The full text for most of these papers may be found at the IEEE website at www.ieee.org. H. Matsuura, S. Sakurai, Y. Oda, S. Fukushima, S. Ishikawa, A. Takeshita,

Radiation, SEU and Reliability

Radiation, SEU and Reliability The full text for most of these papers may be found at the IEEE website at www.ieee.org. Takashi Kameshima, Shun Ono, Togo Kudo, Kyosuke Ozaki, Yoichi