Irradiation by energetic particles can degrade semiconductor device performance. The particles involved can be electrons, positrons, neutrons, protons, alpha particles, heavy ions, or high-energy photons. As they pass through a

A reversed biased PIN diode acts as a radiation event detector, sensing the occurrence of an ionizing radiation pulse, which is connected to a threshold detector, the resistor RThreshold, that

Two fundamental damage mechanisms take place when devices are exposed to particle fluences: ionization and lattice displacement or just displacement damage. Ionization has previously been addressed in other simulation standard

The Simulation Standard article “Simulating Radiation-Induced Shifts in MOSFET Threshold Voltage”1 gives a brief overview of the ways that ionizing radiation can affect semiconductor devices, and considers insulator charging in