Daily Archives: 2013年10月1日
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October 1, 2013
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
13 years ago
Hints, Tips, and Solutions – Simulate Rapid Thermal Annealing Temperature Transients in Vacuum
When a wafer is clamped only at its edges and is heated with an infra-red source in a vacuum, the majority of the heat loss occurs through black body radiation.
13 years ago
Atlas Simulation of a Wide Bandgap Gallium Oxide (Ga2O3) MOSFET
Single-crystal gallium oxide (Ga2O3) has attracted increasing attention as a promising material for power device applications. It possesses excellent material properties and has the potential for mass productivity of low-cost
13 years ago
Simulation of a DBR Edge Emitting Laser with External Air Gap Tuning Mirror
A methodology for simulating an edge emitting laser is demonstrated that incorporates a distributed Bragg Reflector (DBR) as one of the mirrors, with the other being a variable air gap