April 2009

One of the most important features of TCAD simulation is that the TCAD tools encapsulate the physics of the processes or devices being studied. For the user, this can develop

The simulation of stress during device fabrication is becoming increasingly important and is often now deliberately introduced during fabrication to enhance device performance. The induced stress can take the form

VICTORY DEVICE simulation framework includes tools for 1D, 2D and 3D simulation of modern semiconductor technologies. VICTORY DEVICE implements a full tetrahedral meshing engine for fast and accurate simulation of

We show full 3-Dimensional (3D) electrical and optical simulation of a tunable silicon-based Photonic Crystal (PhC) Chromatic Dispersion Compensator (CDC) with high power efficiency and ultra-low power consumption (114nW), operating

Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) Non-Volatile memory structures can be simulated using ATLAS. The basic principle of these devices is the use of a charge trapping Silicon Nitride layer embedded in the oxide