August 2006

How to obtain a stable grid and smooth doping profile in non-planar a-Si TFT using Athena/Elite?

Abstract Improvement in temperature characteristics of GaN LEDs is important for realizing reliable devices operating at high temperatures. In this article, the thermal characteristics of GaN LEDs have been analyzed

Introduction By default STELLAR calculates the capacitances between interconnect lines and the whole substrate. In certain conditions it may lead to some inaccuracies. For example STELLAR may calculate the capacitance

1. Introduction Amorphous oxide semiconductor materials have attracted much attention as key components of TFTs for flexible electronics [1]. The advantages of such materials include flexibility and transparency which are

Polarization-induced charges at the AlGaN/GaN interface of heterojunction field-effect transistors (HFETs) create a high density, two-dimensional electron gas (2DEG) in the channel. One approach to simulating the 2DEG is to