May 2006

Interconnect parasitic effects play a very important role in modern integrated circuit design, especially for digital circuit. This article presents how a cell level BiCMOS nand gate is extracted with

Introduction Power MOSFETs are widely used with an inductive load for S/W power supplies, DC-DC converters, and so on. But due to high frequency operation, the surge voltage applied to

Introduction With the MOSFET gate lengths scaling down to sub-20nms many kinds of devices have been proposed and researched such as double-gate, tri-gate, four-gate and gate-all-around (wire) MOSFETs.

Abstract The measured I-V curve from a ten period Si/SiGe MQW pin LED fabricated using a UHVCVD system is compared with ATLAS simulation results. A sizable silicon emission peak is