August 1, 2004

In this paper the electrostatic impact of Channel Hot Electron (CHE) injection in discrete-trap memories is quantitatively addressed. The dual bit behavior of the transfer characteristic during forward and reverse

This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. SILVACO has already included in its device simulator ATLAS, a Schrödinger-Poisson solver and

The subject of how to use the EXTRACT statement in DeckBuild often arises. The EXTRACT statement is a very useful tool for analysing data and can be performed on both

In certain cases, most notably in modern bipolar and SiGe HBT structures, epitaxial steps are performed after the oxide isolation structures have been already created. Thus the initial surface prior