Shortcode news and reviews
12 years ago
VWF allows a curve as target for optimization. This feature greatly benefits the users who need to calibrate TCAD simulation against measured curve such as SIMS. VWF offers multiple ways
12 years ago
This document is a short guide on the new and existing support for export cropping/slicing in Victory Process cell mode. The cropping operation is useful to extract a segment of
12 years ago
Background: Victory Process is packaged with a wide range of etch models. Victory Process also supports an “Open Modelling Interface” (OMI). The OMI enables users to develop their own models
12 years ago
Irradiation by energetic particles can degrade semiconductor device performance. The particles involved can be electrons, positrons, neutrons, protons, alpha particles, heavy ions, or high-energy photons. As they pass through a
12 years ago
A reversed biased PIN diode acts as a radiation event detector, sensing the occurrence of an ionizing radiation pulse, which is connected to a threshold detector, the resistor RThreshold, that
12 years ago
Two fundamental damage mechanisms take place when devices are exposed to particle fluences: ionization and lattice displacement or just displacement damage. Ionization has previously been addressed in other simulation standard
12 years ago
The Simulation Standard article “Simulating Radiation-Induced Shifts in MOSFET Threshold Voltage”1 gives a brief overview of the ways that ionizing radiation can affect semiconductor devices, and considers insulator charging in
12 years ago
It is often not realized that more than one Single Event Upset (SEU) statement can be used in a simulation. Each SEU statement can locate a strike anywhere in the
12 years ago
Single Event Burnout in a diode, requires a specific set of circumstances to occur, since there is no intrinsic current gain in the device itself to amplify the currents created
12 years ago
The Victory Process cell mode Delaunay 3D device meshing algorithm already includes various TCAD-based local refinement algorithms to ensure accurate and robust device simulation. These include junction and interface distance
12 years ago
Q: I have an SEU beam in a 2D structure; the beam track is at an angle through the device. I don’t want to waste mesh by putting a fine
13 years ago
Calculation of light extraction efficiency or optical output coupling efficiency is often needed in simulating a light emitting device (LED) such as an organic LED (OLED). It is best to