Casey Molver

On the cutting edge of LSI design, the accuracy of Layout Parasitic Extraction (LPE) tools is a critical issue to miniaturized LSI design of rules measuring 0.13 um or lower.

When solving for the static CV curve for a MOS capacitor, due to the absence of current carriers, convergence can be a real problem. Previous methods suggested in the hints

Expert Parametric Wire (Pwire) is a complex group of objects containing, a single wire named master wire, any number of subparts such as enclosure wires, offset wires and sets of

Many users would like to extract SPICE models from their process and device simulation using Athena and Atlas to be used in actual circuit simulation without actually fabricating the device.

For LCD and Memory designs, Array Copy function on Gateway is conveniently used. Users may want to align instances from specified instance number, for example starting from X100 or X1000.

A new Hierarchical Layout versus Schematic (HLVS) system that provides significant improvement in verification of huge circuits is described. Other of LVS verification tools perform a netlist flattening and comparison

Introduction One of the key components in many RF ICs applications is the inductor. It is very important that the inductor has optimal design, meaning optimal geometry with the best

Q: When I do an extract, the generated layers are present in the layout. If I need to do layout modifications I find it very cumbersome to deal with the

Hipex-NET uses two techniques to calculate resistor values. First method of resistance extraction, which is usual for full chip netlist extractors and uses heuristic algorithms to recognize common shapes for

Introduction Mercury cadmium telluride (HgCdTe) is a semiconductor material whose material properties are adjustable through altering its constitutive molar fractions. HgCdTe has found extensive use in optical detection, and in

III-Nitrides have recently attracted attention as a promising material class for high-power, high-frequency microelectronic applications at elevated temperatures. They possess large band gaps, relatively small effective masses in the conduction

We describe here two approaches to model the quantum effects that can no more be neglected in actual and future devices. These models are the Schrödinger-Poisson and Density-Gradient methods fully