Casey Molver

This article will show how you can create LPE rule files using EXACT’s LISA scripting functionality. We will concentrate on generating a technology file for parasitic capacitance extraction with HIPEX-C.

The high gain, and high gain-bandwidth product of the avalanche photodiodes is one of the key device for the long distance optical communication systems. For the 0.92-1.65um wavelength range, the

In the design of VLSI circuits the situations occur very often when a single schematic device is implemented in the layout by the group of several devices connected in parallel

A novel simulation method of the steady-state of oscillators, based on Harmonic Balance (HB), is presented. A comparison with regular transient simulations demonstrates its advantages on a feedback voltage-controlled oscillator

During the elaboration of a Verilog-A model, debugging a module can be very useful for detecting non-physical behavior or fine-tuning the model. The SILVACO Verilog-A debugger has been designed to

If the MOS model file has the parameters: noia, noib, noic, Af, Kf and nlev=0 will SmartSpice ignore the BSIM III noise parameters (noia, noib and noic)

EDIF has been a vital part of the Electronic Design Automation (EDA) industry for many years and Gateway allows users to convert edif200 formatted files of other tools vendors into

Design of large scale chips requires precise knowledge of interconnect delays. However, detailed analysis of interconnects may quickly become computationally too expensive due to the distributed nature of the networks,

Single-Electron Transistors (SETs) [1][2] are attractive candidates for post-CMOS VLSI ICs. Accurate models are also required in order to efficiently design SET circuits and hybrid circuits

Hipex-NET is SILVACO’s powerfull hierarchical layout netlist extractor. Built-in extracting rules permit to make fast and accurate parameter extraction for basic set of devices as MOS, BJT, diode, capacitor and

How can I become a more efficient user of Expert?

In this paper the electrostatic impact of Channel Hot Electron (CHE) injection in discrete-trap memories is quantitatively addressed. The dual bit behavior of the transfer characteristic during forward and reverse