Casey Molver

Polarization-induced charges at the AlGaN/GaN interface of heterojunction field-effect transistors (HFETs) create a high density, two-dimensional electron gas (2DEG) in the channel. One approach to simulating the 2DEG is to

Interconnect parasitic effects play a very important role in modern integrated circuit design, especially for digital circuit. This article presents how a cell level BiCMOS nand gate is extracted with

Introduction Power MOSFETs are widely used with an inductive load for S/W power supplies, DC-DC converters, and so on. But due to high frequency operation, the surge voltage applied to

Introduction With the MOSFET gate lengths scaling down to sub-20nms many kinds of devices have been proposed and researched such as double-gate, tri-gate, four-gate and gate-all-around (wire) MOSFETs.

Abstract The measured I-V curve from a ten period Si/SiGe MQW pin LED fabricated using a UHVCVD system is compared with ATLAS simulation results. A sizable silicon emission peak is

A conventional 2 layer organic light emitting diode consists of a Hole Ttransport Layer (HTL) and an electron transport layer (ETL). A good OLED structure requires sufficient carrier injection so

For various technological reasons, LEDs and as well as photo-voltaic devices frequently use PEDOT:PSS on top of ITO contacts as a hole injecting or hole collecting layer, respectively. However, due

Photolithography simulation is a very important part of TCAD. Accurate and predictive lithography simulation saves time and money spent on development and calibration of semiconductor technology processes.

A new 3D electromagnetic simulator coupled with a statistical analysis, for inductance loop optimization is presented. It allows RF designers to easily create inductor design by only specifying as inputs

How can I create a non planar structure using III-V materials for Device Analysis when the materials I want to use are not in the ATHENA data base.

Simulation capacities of GaInP solar cells were studied with a special emphasis on material and structural parameters. The comparison between experimental and numerical results allowed to validate the models used

Abstract: High-frequency simulations and characterizations of advanced metal-insulator-metal (MIM) capacitors with ultra thin 32 nm PECVD Si3N4 dielectric are presented. The frequency dependent behavior of capacitors is numerically and experimentally