Casey Molver

For high performance large area flexible electronics, amorphous metal oxide semiconductor based thin film transistors offer many advantages. These include high mobility, steep sub-threshold and ultralow leakage current, with low

Gallium Nitride High Electron Mobility (GaN HEMT) device technology has gained a lot of traction during the last years. These devices have significant advantages compared to Silicon in user applications

Geometrical module of Victory Process allows the fast and accurate transfer of mask patterns to the structure. However, sometimes it is necessary to emulate the imperfections of physical processes while

Lower conduction loss and fast switching characteristics for power devices are increasingly required in the more and more energy-conscious world. For the low to medium voltage ranges (12 V ~

It is often the case, that an Engineer is required to simulate environmental effects on a device manufactured by a third party. In such an event, the first issue that

In recent years, radio-frequency (RF) CMOS on Silicon-on-Insulator (SOI) has rapidly evolved as a mainstream technology for switches used in wireless applications such as tuners and power amplifiers [1, 2].

In connection with the reduction in the size of electronic elements and the increase in operating frequencies, it becomes necessary to transmit signals between the nodes of the circuit using