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September 23, 2024

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

2 years ago

실바코, Victory TCAD 및 디지털 트윈 모델링 플랫폼을 평면 CMOS, FinFET 및 고급 CMOS 기술로 확장

2024-09-24

2 years ago

IGBT Switching Simulation Based on the Double-Pulse Method

This article introduces a DPT-based simulation method to perform the transient switching characteristics of an IGBT device. It also provides standard templates for power device switching characteristics and performance assessment