April 2013

Monte Carlo module of Athena allows accurate simulation of ion implantation in 4H-SiC and 6H-SiC [1]. It is known that channeling effects are very pronounced in SiC since its lattice

We demonstrate the capabilities of SILVACO TCAD tools for the design and simulation of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors. We compute the photoconductive gain spectrum of the device

In this article the various enhancements to the organic device modeling that have been implemented recently in Atlas are presented. Following the description of the carrier statistics and the new

Fabrication of various nano-structures often requires mask controlled or patterned etching of materials. The chemical or wet etch methods cannot be used for nanoscale geometries due to the substantial isotropic