Monthly Archives: October 2012

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October 2012

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

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14 years ago

Calibration of the Ion Enhanced Chemical Etching Model of VICTORY Process Using Virtual Wafer Fab

In this article we describe a technique to automatically calibrate parameters of an Ion Enhanced Chemical Etching model implemented in the 3D process simulator VICTORY Process to measurements published in

14 years ago

Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics

Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane

14 years ago

A Semi-Empirical Model for the Simulation of Ion Milling in VICTORY Process

The three-dimensional process simulator VICTORY Process now includes a semi-empirical model for the simulation of ion milling. During ion milling, the mill (etch) rate depends in a complex way on

14 years ago

Developing Custom Etching/Deposition Models in VICTORY Process

VICTORY Process is supplied with a wide range of models and data for an extensive set of materials, so that you can simulate many process steps without the need to