GaN heterojunction field effect transistors (HFETs) have been under extensive investigation because of their projected superb performances as high-power RF devices. The inherently high breakdown field arising from the wide

VICTORY Process is a tool for 3D simulation of the semiconductor industry’s technological processes. It allows stable and accurate modeling of the changes in a structure’s 3D geometry within etching

VICTORY Process is a 3D process simulation tool which allows for an accurate simulation of the doping distributions in semiconductor devices. It is able to simulate both the insertion of