July 1, 2000

In this paper, I have used the same technique to model uni-directional HV MOS devices as previously reported for bi-directional HV MOS devices [4] -[5] while adopting a new parameter

RF MOSFET Small - Signal Model and Parameters Small-signal equivalent circuit of MOSFET after de-embedding parasitics is shown in Figure 1 and small-signal model parameters are listed in Table 1.

SOI technology appears now to have become an advantageous, viable option for low-voltage and high-performance CMOS integrated circuits in digital, analog, and mixed-signal applications. The thin-film nature of the SOI