May 1998

How can anti-reflective coatings be modeled when simulating photodetectors in ATLAS/Luminous? How can detection efficiency be plotted?

This article focuses on the effects of process and modeling parameters on device electrical characteristics and uses the threshold voltage versus gate length of a n-MOSFET as an illustration.

Mixed-signal systems-on-a-chip (SOC) integration of digital, analog, RF, and power components is emerging to meet demands for low-power, highly integrated systems in portable computing, wireless communications, and multimedia.

FastBlaze is a fast physical device simulator for MESFETs and HEMTs optimized to provide interactive TCAD for modern III-V FET devices. It incorporates device-specific techniques to allow 1000x to 10000x