Yearly Archives: 2017
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2017
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
10 years ago
総線量、放射線流による損傷、即発線量およびSEUのTCADシミュレーション
このウェビナーでは、宇宙空間または高エネルギー粒子や光子源付近など、一般的な4つの放射線環境下でエレクトロニクス・デバイスを使用した場合に発生する動作特性の変化について、酸化膜電荷や物理的損傷などを含む具体的なシミュレーション方法を取り上げます。
10 years ago
有機半導体光デバイスのためのTCADシミュレーション
本ウェビナーは、LEDや有機ELなどの発光デバイスの特性解析用統合環境であるRadiantを紹介します。
10 years ago
Simulation of a Bipolar Junction Transistor Under High and Low Current Injection Conditions
Semiconductor devices such as bipolar power transistors and solar cells may operate over a range of optical or electrical injection levels. In some cases of high injection, this may result
10 years ago
Thermo-mechanical Stress in Through-Silicon-Vias
During the last several years, the enhancement of integrated circuits (ICs) performance and power consumption have contributed to the continual scaling down the size of transistors. However, scaling down semiconductor
10 years ago
Hints, Tips and Solutions – Extract geometric information from 3D process simulation
Q: How do I extract geometric information, such as material thickness or junction depth, from the current 3D process simulation using Victory Process?