In this paper, I have used the same technique to model uni-directional HV MOS devices as previously reported for bi-directional HV MOS devices [4] -[5] while adopting a new parameter

RF MOSFET Small - Signal Model and Parameters Small-signal equivalent circuit of MOSFET after de-embedding parasitics is shown in Figure 1 and small-signal model parameters are listed in Table 1.

SOI technology appears now to have become an advantageous, viable option for low-voltage and high-performance CMOS integrated circuits in digital, analog, and mixed-signal applications. The thin-film nature of the SOI

Q: To simplify netlist extraction, I specify one kind of diffusion resistors in my layout by means of a special resistor definition layer. To my surprise, the extracted value for

A parameterized cell (P-Cell) is a cell with user-specified parameters. It is possible to create customized p-cell instances with different composition according to parameter values. Using P-Cells gives a considerable

Dragon DRC is a new advanced hierarchical DRC system. The design principles this system is based on are carefully selected to ensure that Dragon DRC will deliver maximum performance in

The latest release of Layout versus Schematic tools from CELEBRITY CAD suite (Maverick full-chip parametric netlist extractor and Guardian hierarchical netlist comparator) delivers a number of significant advances. The engines

The DVCS subsystem of CELEBRITY CAD suite provides significant improvement in management of complex designs, design reuse and teamwork management. The most important features of DVCS are the means for

Q. When I simulate my process flow the simulated profile is always lower than the SRP measurements. What could be causing this? A. In many simulated process flows the surface

The rapid evolution of modern photonic devices in digital photographic and detection systems creates a need for physically-based simulation of charge collection and transfer. In this article we show the