Home> >

Adv_CMOS_ex13.in : 28HKMG Core PMOS Simulation

Adv_CMOS_ex13.in : 28HKMG Core PMOS Simulation

Adv_CMOS_ex13.in : 28HKMG Core PMOS Simulation

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation
  • 2D Oxidation
  • 2D Stress

Victory Mesh

  • 2D Meshing

Victory Device

  • 2D Simulator
  • 2D Giga

This example demonstrates a 28HKMG Core PMOS simulation, covering a complete workflow from process to device modeling. In the process section, various process modules are integrated itno a unified flow, with particualr emphasis on the introduction of SiGe structure generation and stress engineering within the process simulation. For the device part, the Multi-Valley Strain Mobility Model (MVSM) is applied to simulate device performance enhancement, while transfer characterization and parameter extraction are also included.
-Structure Creation:
Process simulation flow of a 28nm Core PMOS structure, various process modules are integrated into this flow, including SiGe structure genration and stress engineering.
-Process parameter extraction
Mirroring structure at the end of Process Simulation
-Remeshing in Victory Mesh
-Electrical Simulation:
Transfer characterization:
-IdVglin and IdVgsat Simulation with or without Stress effect
Parameter extraction: Vtgm/Vtlin/Idlin/Idsat/Idoff/SSsat/DIBL Extraction

Images

Adv_CMOS_ex13_01.png
Adv_CMOS_ex13_02.png

Related Articles