Home> >

Adv_CMOS_ex04.in : 55nm CMOS Core Device Characterization

Adv_CMOS_ex04.in : 55nm CMOS Core Device Characterization

Adv_CMOS_ex04.in : 55nm CMOS Core Device Characterization

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation
  • 2D Oxidation

Victory Mesh

  • 2D Meshing

Victory Device

  • 2D Simulator

This example is for an 55nm Core Device and includes complete simulation flow from process to device modeling. In the process part, various process modules are integrated into a single flow. In the device part, transfer characterization and parameters extraction are included.

Structure Creation:

Process simulation flow of a 55nm Core Device structure, various process modules are integrated into this flow.

Process parameter extraction (e.g., oxide thicknesses)

Mirroring structure at the end of Process simulation

Remeshing in Victory Mesh

Electrical Simulation:

Transfer characterization:
-IdVglin and IdVgsat Simulation

Parameter extraction: Vtgm/Vtlin/Idlin/Vtsat/Idsat/Idoff/ DIBL Extraction

Images

Adv_CMOS_ex04_01.png
Adv_CMOS_ex04_02.png

Related Articles