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Adv_CMOS_ex02.in : 180nm 3.3V CMOS IO Device Characterization

Adv_CMOS_ex02.in : 180nm 3.3V CMOS IO Device Characterization

Adv_CMOS_ex02.in : 180nm 3.3V CMOS IO Device Characterization

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation
  • 2D Oxidation

Victory Mesh

  • 2D Meshing

Victory Device

  • 2D Simulator

This example is for an 180nm 3.3V IO Device and includes complete simulation flow from process to device modeling. In the process part, various process modules are integrated into a single flow. In the device part, transfer characterization, breakdown and substrate current simulation and parameters extraction are included.

Structure Creation:

Process simulation flow of a 180nm IO Device structure, various process modules are integrated into this flow.

Process parameter extraction (e.g., oxide thicknesses)

Mirroring structure at the end of Process simulation

Remeshing in Victory Mesh

Transfer characterization:

IdVglin and IdVgsat Simulation

Parameter extraction: Vtgm/Vtlin/Idlin/Vtsat/Idsat/Idoff/SSsat/DIBL Extraction

Output Characteristics: Breakdown Simulation and Voltage Extraction

Images

Adv_CMOS_ex02_02.png
Adv_CMOS_ex02_03.png
Adv_CMOS_ex02_01.png

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