Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

• 2D Diffusion & Implantation
• 2D Oxidation

Victory Mesh

• 2D Meshing

Victory Device

• 2D Simulator
• 2D Giga

This example is for a 180nm IO GGNMOS Device and includes complete simulation flow from process to device modeling. This example shows:
– Structure Creation in Victory Process.
– Remeshing in Victory Mesh.
– Selection of lattice heat flow models in Victory Device simulation.
– Analysis of a snapback and secondary breakdown IV curve.

In the process part, a basic process simulation flow shows how to generate device. In the device part, the steady state secondary breakdown simulation of the transistor is performed.
Second breakdown analysis is an important figure of merit in the understanding of the resistance of devices to high current (voltage) stress caused by the ESD events. The VD simulation begins with the high precision -80 setting included in simflags statement to get better converge results. The following part is the definition of the physical models and material parameters of the device. The contact statement is used to define the workfunction of the polysilicon electrode. The material statement is used to define the electron and hole lifetimes in semiconductor.
The physical models used in this simulation reflect the different physical effects important to electrothermal device simulation. The mobility model CVT includes the concentration, electric field and temperature dependencies, as well as a surface mobility degradation effects. In addition to the Shockley-Read-Hall recombination model (SRH), the recombination model AUGER is included to take into account the high injection level effects. Band gap narrowing is taken into account by means of the BGN parameter. Impact ionization is necessary for any breakdown simulation, and it is also included here.
A non-isothermal approach is used, which means that the heat flow equation is solved in addition to the semiconductor equations and all physical parameters become temperature dependent. The model LAT.TEMP enables the solution of the heat flow equation.
Thermal isolation is assumed where no thermal contacts are specified. In all non-isothermal simulations, the definition of the thermal boundary condition is very important. Thermal boundary conditions are defined in the THERMCONTACT statement. A value of the thermal conductance (alpha) determines the heat conductivity from the THERMCONTACT side into the internal device. In this case, we use substrate, as well as drain as the specified THERMCONTACT. And thermal isolation conditions are assumed on all the other surfaces besides the bottom and drain side.
The solve statement shows how to switch from voltage boundary condition to current boundary condition when the current varies exponentially. This is a simple and effective procedure for the demonstration of the complicated snapback and secondary breakdown I-V characteristics that could be used with any initial structure.
The steady state current/voltage characteristics are saved in a LOG file. It is possible to observe the maximum temperature in the device versus current/voltage. The sharp decrease of the voltage on the non-isothermal I-V curve shows the onset of second breakdown.
The Trigger and Hold voltage data is extracted from the input I-V curve.

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