PG-Fig8-6.in : Boron implants at 25keV and 100keV + 60min 1000C diffusion

PG-Fig8-6.in : Boron implants at 25keV and 100keV + 60min 1000C diffusion

PG-Fig8-6.in : Boron implants at 25keV and 100keV + 60min 1000C diffusion

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation

From “Integrated Circuit Fabrication: Science and Technology by Plummer & Griffin, published by Cambridge University Press

Plots indicate delta-function surface diffusion and deep gaussian diffusion.
The delta function is approximated by a shallow boron implant.
The deep boron implant approximates a buried gaussian layer, which remains gaussian as it diffuses (aside from interactions when it reaches the surface, which can only be captured by numerical simulations)

Images

PG-Fig8-6_Boron_25keV.png

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