PG-Fig8-45.in : TED of P implant 5e15, 100keV tilt=7

PG-Fig8-45.in : TED of P implant 5e15, 100keV tilt=7

PG-Fig8-45.in : TED of P implant 5e15, 100keV tilt=7

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation

From “Integrated Circuit Fabrication: Science and Technology by Plummer & Griffin, published by Cambridge University Press

TED of Phosphorus for various diffusion times at 800C
The high dose removes {311} defects in the amorphous region
Main parameter is max.clust=1e19, indicating the substrate
is amorphous is amorphous above 1e19/cm3

Images

PG-Fig8-45_Phos.png
PG-Fig8-45-01.png
PG-Fig8-45_IntClusters.png
PG-Fig8-45-02.png

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