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A novel simulation method of the steady-state of oscillators, based on Harmonic Balance (HB), is presented. A comparison with regular transient simulations demonstrates its advantages on a feedback voltage-controlled oscillator

During the elaboration of a Verilog-A model, debugging a module can be very useful for detecting non-physical behavior or fine-tuning the model. The SILVACO Verilog-A debugger has been designed to

If the MOS model file has the parameters: noia, noib, noic, Af, Kf and nlev=0 will SmartSpice ignore the BSIM III noise parameters (noia, noib and noic)

EDIF has been a vital part of the Electronic Design Automation (EDA) industry for many years and Gateway allows users to convert edif200 formatted files of other tools vendors into

Design of large scale chips requires precise knowledge of interconnect delays. However, detailed analysis of interconnects may quickly become computationally too expensive due to the distributed nature of the networks,

Single-Electron Transistors (SETs) [1][2] are attractive candidates for post-CMOS VLSI ICs. Accurate models are also required in order to efficiently design SET circuits and hybrid circuits

Hipex-NET is SILVACO’s powerfull hierarchical layout netlist extractor. Built-in extracting rules permit to make fast and accurate parameter extraction for basic set of devices as MOS, BJT, diode, capacitor and

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In this paper the electrostatic impact of Channel Hot Electron (CHE) injection in discrete-trap memories is quantitatively addressed. The dual bit behavior of the transfer characteristic during forward and reverse

This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. SILVACO has already included in its device simulator ATLAS, a Schrödinger-Poisson solver and

The subject of how to use the EXTRACT statement in DeckBuild often arises. The EXTRACT statement is a very useful tool for analysing data and can be performed on both

In certain cases, most notably in modern bipolar and SiGe HBT structures, epitaxial steps are performed after the oxide isolation structures have been already created. Thus the initial surface prior