Simulation Standard

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In this paper the electrostatic impact of Channel Hot Electron (CHE) injection in discrete-trap memories is quantitatively addressed. The dual bit behavior of the transfer characteristic during forward and reverse

This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. SILVACO has already included in its device simulator ATLAS, a Schrödinger-Poisson solver and

The subject of how to use the EXTRACT statement in DeckBuild often arises. The EXTRACT statement is a very useful tool for analysing data and can be performed on both

In certain cases, most notably in modern bipolar and SiGe HBT structures, epitaxial steps are performed after the oxide isolation structures have been already created. Thus the initial surface prior

This article focuses on the use of Silvaco’s RFIC Design Suite including PDK, SmartSpice-RF, and Gateway.

HiSIM-1.2 parameter extraction methodology was discussed in detail in a previous issue of Silvaco Simulation Standard [1]. This article is meant to provide the precise UTMOST-III local optimization strategies to

1. Introduction BSIM1, the first model of the BSIM series was released about ten years ago. Some major improvements have been made since that time, making the BSIM3v3 and BSIM4

Customers are starting to use 64bit machines with large hard drives and Gigs of RAM and tend to forget the limitations imposed by a 32bit operating system. If you have

Expert’s Node Probing is powerful tool for inspection of netlist components on layout. It is designed for highlighting layout objects electrically connected with each others. The additional features of Node