Casey Molver

New improvements have been added to Shur models. These enhancements include a self-heating effect and a new charge conservative model.

The Berkeley BSIM3SOI version 2.1 models, released in September 1999, have been implemented in SmartSpice. The three new models are selected according to LEVEL selector.

Q: How can I cut exactly the same hole in many layers? A: There are at least two ways to do this. (1) You may use the command Tools>>Cut by

One of the main features of modern complex CAD systems consists in the ability to support the schematic capture function that provides a user with convenient design entry. In our

A: Modeling of the increase in breakdown voltage at elevated temperatures requires a model to describe the temperature dependence of the impact ionization coefficients. In ATLAS there are two impact

The recent advances in PC hardware capability in terms of memory and CPU floating point performance has allowed the possibility of running realistic sized ATHENA and ATLAS problems on PCs.

In order to simulate heterojunction devices accurately, both the thermionic emission and tunneling mechanisms must be considered when calculating transport across hetrojunctions. Drift-diffusion descriptions of carrier mobility are incomplete at

EXACT is a sophisticated interconnect characterization tool integrated into the DISCOVERY framework. It is designed to build the capacitance coefficient database required by any Layout Parasitic Extraction (LPE) tool. To

The "Binning" routine in UTMOST III MOS module has been greatly enhanced. The bin models can be generated much faster and the routine requires less user interface.

Silvaco now offers the MOS31 JFET/MOSFET model originally developed by Philips [1] as part of the SmartLib product-independent model library. This model is available within SmartSpice as level 31.

Bulk CMOS is currently the dominant technology for VLSI integrated circuits but its scaling constraints pose ever greater as device geometries shrink. Thus, the search for a suitable replacement has

A. Previous articles in the Simulation Standard have highlighted the diffusion models required for accurate simulation of shallow source/drain junction formation[1] and Reverse Short Channel Effect (RSCE)[2][3]. However for complete