Yearly Archives: 2017
Home > Search Results For
2017
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
9 years ago
TCAD Simulations of TFET and Tunneling Diode
Researchers and designers are looking into a future of ultra-low power and ultra-low voltage (ULV) devices and designs. Portable devices, nodes, and sensors, energy harvesting are all examples of devices
9 years ago
TFT Panel Simulation Using SmartSpice Pro
TFT panels have already gained their undisputable reputation in a variety of professional and commercial applications. High quality, ease of customization, and comparably low manufacturing costs position these panels as
9 years ago
Accelerating TFT and FPD Design
Accelerating TFT and FPD Design This webinar will provide an overview of different techniques for TFT and FPD design enabled by the Silvaco EDA tool portfolio. With recent advances in
9 years ago
Enabling TCAD for TFT, LCD & OLED Display Designs
Enabling TCAD for TFT, LCD & OLED Display Designs This webinar will provide an insight into different TCAD-based simulation techniques that designers of TFT, LCD and OLED display can make
9 years ago
Get a Head Start on Reliability Analysis Early in Your Design Cycle
Get a Head Start on Reliability Analysis Early in Your Design Cycle Power integrity issues must be addressed as early in the design cycle as possible to avoid expensive design
10 years ago
Model Extraction for Body-Biased XDMOS Devices
Compared with regular MOSFET devices, the body bias effect in HVMOS is usually more pronounced. In addition to the regular threshold voltage increase with body bias, the LDD region of
10 years ago
Edge Effect Analysis on TFT Devices Using 3D Numerical Simulation
3D TFT analysis has been getting lots of attention due to issues caused by 3D effects such as the edge effect on the TFT characteristics. The presence of an enhanced
10 years ago
3D Simulation of Dual-Gate Thin Film Transistors
Dual-Gate Thin Film Transistors (DGTFTs) are often used in pixel driver and peripheral circuits for liquid crystal displays. This is because of the reduction of the gate-off state leakage current
10 years ago
Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD
The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE). With 20 nm advanced planar technology, the source and
10 years ago
Secrets of Parasitic Extraction Unveiled
Secrets of Parasitic Extraction Unveiled! Parasitic extraction is a mandatory step for physical design sign off, and at advanced nodes, parasitics substantially impact the behavior of circuit design. Any analysis