Yearly Archives: 2016
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2016
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
10 years ago
Victory Process 2D – An Innovative Alternative to SUPREM-based Simulators Ensuring Robust 3D Solutions
Victory Process 2D – An Innovative Alternative to SUPREM-based Simulators Ensuring Robust 3D Solutions Two-dimensional process simulators based on SUPREM-IV from Stanford University have been used in semiconductor research and
10 years ago
Statistical Analysis Flow for Analog Design with VarMan
Statistical Analysis Flow for Analog Design with VarMan The impact of variation on analog design has become critical with the advanced nodes technology. The regular Monte Carlo approach for statistical
10 years ago
TCAD Simulation of Impact Ionization at Cryogenic Temperatures, down to 3 K
Some electronic devices operate at very low, cryogenic temperatures, sometimes as low as 4 K, which is the temperature of liquid helium. Such devices include infra-red (IR) photodetectors or single-photon
10 years ago
Stress Induced by Intrinsically Strained Silicon Nitride Passivation Films of AlGaN/GaN HEMTs Using Victory Process 2D
In the AlGaN/GaN HEMT fabrication process, silicon nitride (Si3N4) passivation of the HEMT surface layer, which is typically AlGaN, is commonly used to mitigate defect-related charge traps at the AlGaN
10 years ago
Victory Process 2D – A Valuable Alternative To SUPREM-based Simulators
SUPREM-IV – Stanford University PRocEss Modeling Program was first released 30 years ago. Since then its descendants - Athena from Silvaco and TSUPREM-4TM from TMA/Avant/Synopsys - have been 2D process
10 years ago
TCAD Simulation of Organic Optoelectric Devices
This webinar will introduce Radiant developed as an integrated simulation environment of LED and OLED devices and will focus on an OLED
10 years ago
Semiconductor IP Community Joins Forces To Launch IP Tradeshow and Conference
Semiconductor IP Community Joins Forces To Launch IP Tradeshow and Conference REUSE 2016 Event Focuses Exclusively on Fastest Growing Segment of the Semiconductor Industry Santa Clara, California – September 14,
10 years ago
WeEn Semiconductors Selects Silvaco’s TCAD Products for Advanced Bipolar Power Device Design
August 9, 2016
10 years ago
Power Distribution Network Analysis for Layout Engineers
Power Distribution Network Analysis for Layout Engineers This webinar will provide an overview of Silvaco’s new reliability analysis tool InVar Prime. InVar Prime is an addition to the family of
10 years ago
Simulation of Device Degradation Due to Bias Temperature Stress
Introduction Bias Temperature Instability (BTI) [1] ranks among the most serious reliability issues in present-day semiconductor devices. In pMOSFETs, for instance, it is observed when large negative biases are applied