July 1, 2014

It is often not realized that more than one Single Event Upset (SEU) statement can be used in a simulation. Each SEU statement can locate a strike anywhere in the

Single Event Burnout in a diode, requires a specific set of circumstances to occur, since there is no intrinsic current gain in the device itself to amplify the currents created

The Victory Process cell mode Delaunay 3D device meshing algorithm already includes various TCAD-based local refinement algorithms to ensure accurate and robust device simulation. These include junction and interface distance

Q: I have an SEU beam in a 2D structure; the beam track is at an angle through the device. I don’t want to waste mesh by putting a fine