February 1, 2004

III-Nitrides have recently attracted attention as a promising material class for high-power, high-frequency microelectronic applications at elevated temperatures. They possess large band gaps, relatively small effective masses in the conduction

We describe here two approaches to model the quantum effects that can no more be neglected in actual and future devices. These models are the Schrödinger-Poisson and Density-Gradient methods fully

To illustrate the use of this statement to find depletion widths we have used the standard MOSFET example mos1ex01.in to first create the structure. Then the drain voltage was swept

1. Introduction The Exact analysis stage extracts the user-required information necessary for the respective parasitic capacitances by probing the Exact database. This is performed via script files written in LISA

Introduction In response to high demand, device designers are developing silica microlenslets that offer efficient coupling between optical fiber bundles and arrays of photodetectors, LEDs, or VCSELs. Microlenslet design involves