November 2002

A great deal of recent industry attention has focused on the use of non-planar multi-gate device structures in future generation MOS devices that feature channel lengths below about 50 nm

In order to investigate the influence of ridge separation on the transverse optical modes of a double ridge edge multiple quantum well (MQW) emitting laser, we have designed a generic

The trend toward smaller MOSFET devices with thinner gate oxide and greater doping is resulting in the increased importance of quantum mechanical effects, which are observed as shifts in threshold

It is possible to now create new heterojunction and double heterojunction bipolar transistors [2] utilizing junction layers made of different heterojunction semiconductor materials. Typically a heterojunction bipolar transistor (HBT) consists

When an implant occurs there will be some level of damage to the crystal structure of the silicon. If this damage is not annealed out then any subsequent implant will